Silicon carbide (SiC) is a high-performance structural ceramic for elevated temperatures, renowned for its exceptional properties including high strength, high hardness, high thermal conductivity, low coefficient of thermal expansion, as well as excellent oxidation resistance, corrosion resistance, and wear resistance. These attributes make it widely applicable across numerous downstream sektorer .
However, SiC is a material characterized by strong covalent bonding. During sintering, atomic diffusion rates are exceedingly low, and both grain boundary sliding resistance and thermal stability are high. Consequently, achieving densification typically necessitates the use of sintering aids or specialized sintering techniques such as hot isostatic pressing (HIP), pressureless sintering, eller reaktionssintring .
Reaktionsbundet kiselkarbid (RBSC) uppfanns i synnerhet initialt av Popper vid British Ceramic Research Association (BCRA) på 1950-talet . Den grundläggande principen involverar infiltration av en reaktiv flytande kisel eller kisel legering, drivet av kapillära krafter, till en porumskolt. reacts with the carbon within the body to form new silicon carbide. This newly formed silicon carbide bonds *in situ* with the original silicon carbide particles present in the green body. Simultaneously, the infiltrant fills the remaining pores within the body, thereby completing the densification process.
Compared to other SiC ceramic fabrication processes, RBSC offers distinct advantages: lower sintering temperatures, near-net-shape forming capability, high strength at elevated temperatures, dimensional stability under high-temperature use, high thermal conductivity, oxidation resistance, good chemical stability, and exceptionally long service life. As a result, RBSC has found extensive application in various high-tech fields demanding Högtemperaturstabilitet .
Under det senaste decenniet har den snabba utvidgningen av den fotovoltaiska industrin drivit en betydande tillväxt i marknadens efterfrågan på reaktionsbundna kiselkarbid (RB-SIC) keramik . på motsvarande sätt har både antalet och produktionsskalan för inhemska RB-SIC-tillverkare i Kina visat en konsekvent årlig tillväxt .}
Genom år med industriell validering har RB-SIC-teknik visat sig vara särskilt framgångsrik när det gäller att tillverka kritiska keramiska komponenter för andra generationens (2G) och generation 2 . 5 (2,5G) fotovoltaiska cellproduktionslinjer.
Since the second half of 2023, intensified competition among suppliers of reaction-bonded silicon carbide (RB-SiC) to the photovoltaic (PV) industry has emerged, driven by fluctuations in the international environment and market demand. Under such circumstances, RB-SiC manufacturers must prioritize enhancing their product quality and continuously improving competitiveness to secure survival and growth through core technological Fördelar .
Concurrently, the rapid advancement of China's semiconductor industry-encompassing integrated circuits (IC), discrete devices, optoelectronic devices, and sensors-has fueled significant growth in the market value of precision silicon carbide (SiC) ceramics. This surge attracts considerable investor attention. Precision SiC ceramics are now critical components in Halvledartillverkning, som används över både mogna och avancerade processnoder .
However, the supply of these high-value components remains dominated by a limited number of foreign companies. Protracted lead times and prohibitively high prices hinder the urgent need for high-quality development among domestic chip manufacturers. Therefore, localization (import substitution) remains the primary focus for industry players striving to overcome these supply chain challenges.
